Fiat, S. Et Al. 2013. The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes. CURRENT APPLIED PHYSICS , vol.13, no.6 , 1112-1118.

Fiat, S., POLAT, İ., BACAKSIZ, E., Kompitsas, M., & ÇANKAYA, G., (2013). The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes. CURRENT APPLIED PHYSICS , vol.13, no.6, 1112-1118.

Fiat, S. Et Al. "The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes," CURRENT APPLIED PHYSICS , vol.13, no.6, 1112-1118, 2013

Fiat, S. Et Al. "The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes." CURRENT APPLIED PHYSICS , vol.13, no.6, pp.1112-1118, 2013

Fiat, S. Et Al. (2013) . "The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes." CURRENT APPLIED PHYSICS , vol.13, no.6, pp.1112-1118.

@article{article, author={S. Fiat Et Al. }, title={The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes}, journal={CURRENT APPLIED PHYSICS}, year=2013, pages={1112-1118} }