Distribution of components in Si-Ge bulk crystals grown by the zone levelling method

VARILCI A., Kucukomeroglu T., AZHDAROV G.

CHINESE JOURNAL OF PHYSICS, cilt.41, sa.1, ss.79-84, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 41 Sayı: 1
  • Basım Tarihi: 2003
  • Dergi Adı: CHINESE JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.79-84
  • Karadeniz Teknik Üniversitesi Adresli: Evet

Özet

The component distribution in Si-Ge bulk crystals grown by the zone leveling technique has been analyzed theoretically, with a view to estimating the operational parameters for preparing mixed crystals with the desired uniform and/or graded composition profiles. A numerical model, using the equilibrium distribution coefficient defined in the phase diagram, capable of predicting the component redistribution in Si-Ge crystal at any stage of the zone leveling growth, is proposed. Compositional profiles of Si-Ge crystals with a variety of operational parameters, such as the molten zone length and the initial ingot composition, are calculated and discussed. It was found that the Si concentration profile in Si-Ge crystal as a function of zone length changes considerably from fully graded to almost uniform along the growth direction. Obtained results allow the operational parameters for preparing Si-Ge mixed crystal to be estimated.