Effect of illumination on electrical characteristics of Au/Mn-complex/n-Si photodiode structures

Barıs B., Yıldırım M., Karadeniz S., Karabulut A., Kose A., Yıldız D.

Journal of Materials Science: Materials in Electronics, cilt.33, sa.5, ss.2631-2642, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 33 Sayı: 5
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s10854-021-07469-y
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.2631-2642
  • Karadeniz Teknik Üniversitesi Adresli: Hayır

Özet

© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.We were produced a various Mn-doped complex and presented it in Au/Mn-complex/n-Si structure as an interfacial layer. For this aim, a metal-nicotinate/nicotinamide mixed ligand complex was synthesized with Mn dopant. Surface morphologies were investigated using surface analysis methods (AFM and SEM) and relatively smooth and uniform surfaces were obtained for each doping level. The devices were characterized using current–voltage and time-dependent photoresponse measurements. In order to examine the response to light, the measurements were carried out in the dark and different lighting (from 20 to 100 mW/cm2) intensities. With the increasing amount of Mn dopant, the barrier heights and junction resistance of devices were decreased. Increasing the amount of light was increased the sensitivity of the devices to the light. The highest photoconductivity was recorded for 1 mg Mn-complex. It was seen from obtained results, the fabricated devices exhibited good photodiode behavior and can be used in optoelectronic applications.