Fabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structures

BACAKSIZ E. , AKSU S., Cankaya G., YILMAZ Ş. , POLAT İ. , KÜÇÜKÖMEROĞLU T. , ...Daha Fazla

THIN SOLID FILMS, cilt.519, ss.3679-3685, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 519 Konu: 11
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.tsf.2011.01.254
  • Sayfa Sayıları: ss.3679-3685


Micro-sized ZnO rods on a SnO2 coated glass substrate were obtained by the spray pyrolysis method. Then a p-type CuSCN layer was deposited on this micro-sized n-ZnO to produce a p-n heterojunction. Temperature dependent current-voltage characteristics were measured in the temperature range 150-300 K with a step of 25 K. The current-voltage characteristics exhibit electrical rectification behavior. The zero bias barrier height Phi(b0) increases and the ideality factor n decreases with an increase in temperature. The apparent Richardson constant and mean barrier height were found to be 0.0028 A cm(-2) K-2 and 0.228 eV respectively in the range 150-300 K. After a barrier height inhomogeneity correction, the Richardson constant and the mean barrier height were obtained as 6520 A cm(-2) K-2 and 0.840 eV, respectively. (C) 2011 Elsevier B.V. All rights reserved.