Fabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structures


BACAKSIZ E. , AKSU S., Cankaya G., YILMAZ Ş., POLAT İ. , KÜÇÜKÖMEROĞLU T. , ...More

THIN SOLID FILMS, vol.519, no.11, pp.3679-3685, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 519 Issue: 11
  • Publication Date: 2011
  • Doi Number: 10.1016/j.tsf.2011.01.254
  • Title of Journal : THIN SOLID FILMS
  • Page Numbers: pp.3679-3685
  • Keywords: ZnO micro-rods, CuSCN/n-ZnO, Heterojunction, Electrical properties, CURRENT-VOLTAGE CHARACTERISTICS, EXTREMELY THIN ABSORBER, SENSITIZED SOLAR-CELL, TEMPERATURE-DEPENDENCE, SCHOTTKY DIODES, ELECTRICAL CHARACTERIZATION, BARRIER INHOMOGENEITIES, OPTICAL-PROPERTIES, FILMS, PARAMETERS

Abstract

Micro-sized ZnO rods on a SnO2 coated glass substrate were obtained by the spray pyrolysis method. Then a p-type CuSCN layer was deposited on this micro-sized n-ZnO to produce a p-n heterojunction. Temperature dependent current-voltage characteristics were measured in the temperature range 150-300 K with a step of 25 K. The current-voltage characteristics exhibit electrical rectification behavior. The zero bias barrier height Phi(b0) increases and the ideality factor n decreases with an increase in temperature. The apparent Richardson constant and mean barrier height were found to be 0.0028 A cm(-2) K-2 and 0.228 eV respectively in the range 150-300 K. After a barrier height inhomogeneity correction, the Richardson constant and the mean barrier height were obtained as 6520 A cm(-2) K-2 and 0.840 eV, respectively. (C) 2011 Elsevier B.V. All rights reserved.