Fabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structures

BACAKSIZ E., AKSU S., Cankaya G., YILMAZ Ş., POLAT İ., KÜÇÜKÖMEROĞLU T., ...Daha Fazla

THIN SOLID FILMS, cilt.519, sa.11, ss.3679-3685, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 519 Sayı: 11
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.tsf.2011.01.254
  • Dergi Adı: THIN SOLID FILMS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3679-3685
  • Anahtar Kelimeler: ZnO micro-rods, CuSCN/n-ZnO, Heterojunction, Electrical properties, CURRENT-VOLTAGE CHARACTERISTICS, EXTREMELY THIN ABSORBER, SENSITIZED SOLAR-CELL, TEMPERATURE-DEPENDENCE, SCHOTTKY DIODES, ELECTRICAL CHARACTERIZATION, BARRIER INHOMOGENEITIES, OPTICAL-PROPERTIES, FILMS, PARAMETERS
  • Karadeniz Teknik Üniversitesi Adresli: Evet

Özet

Micro-sized ZnO rods on a SnO2 coated glass substrate were obtained by the spray pyrolysis method. Then a p-type CuSCN layer was deposited on this micro-sized n-ZnO to produce a p-n heterojunction. Temperature dependent current-voltage characteristics were measured in the temperature range 150-300 K with a step of 25 K. The current-voltage characteristics exhibit electrical rectification behavior. The zero bias barrier height Phi(b0) increases and the ideality factor n decreases with an increase in temperature. The apparent Richardson constant and mean barrier height were found to be 0.0028 A cm(-2) K-2 and 0.228 eV respectively in the range 150-300 K. After a barrier height inhomogeneity correction, the Richardson constant and the mean barrier height were obtained as 6520 A cm(-2) K-2 and 0.840 eV, respectively. (C) 2011 Elsevier B.V. All rights reserved.