Effect of F-doping on structural, electrical, and optical properties of NiO thin films


Kerli S., ALVER Ü.

CRYSTALLOGRAPHY REPORTS, vol.59, no.7, pp.1103-1106, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 59 Issue: 7
  • Publication Date: 2014
  • Doi Number: 10.1134/s1063774514080057
  • Title of Journal : CRYSTALLOGRAPHY REPORTS
  • Page Numbers: pp.1103-1106

Abstract

NiO and fluorine doped NiO (NiO:F) films were produced by airbrush spray deposition techique. All films were prepared onto glass substrates at 400A degrees C and annealed at 550A degrees C. Structural, electrical, and optical properties of the films were investigated as a function of fluorine concentration (1, 5 and 10 at %). X-ray diffraction spectra have revealed that crystal structures of the films were cubic. Optical measurements show that the average optical transmittance of the films in the entire visible region was higher than 75% and the band gap energies of the films increased by fluorine doping. Adding fluorine to NiO structure reduces the resistivity and the resistivity passes through a minimum for 1 at % F.