In this work, ZnO and boron doped ZnO (ZnO:B) thin films were produced by chemical spray pyrolysis method. ZnO and ZnO:B films were obtained onto glass substrates at 450A degrees C by spray pyrolysis method and the physical properties of those films were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectrometer (UV) and four probe technique. XRD measurements show that all films have hexagonal wurtzite structure and all films grow preferentially along (002) direction. Morphologies of the films were examined by using a scanning electron microscopy and it was observed that almost all films were quite intense with a regular structure. Optical measurements showed that the band gap energies of the films increased with boron concentrations. The resistances of the B-doped ZnO films were measured by four probe method and resistances of films initially decreased to its minimum 1 at% boron doping and then it increased again with increasing B concentration. It was also observed that that boron doping increased the activation energies of the films.