Investigation the Performance of Cr-Doped ZnO Nanocrystalline Thin Film in Photodiode Applications
JOM, vol.74, no.3, pp.777-786, 2022 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 74 Issue: 3
- Publication Date: 2022
- Doi Number: 10.1007/s11837-021-05096-w
- Journal Name: JOM
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, ABI/INFORM, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, Computer & Applied Sciences, EMBASE, INSPEC, Metadex, Civil Engineering Abstracts
- Page Numbers: pp.777-786
- Karadeniz Technical University Affiliated: No
Abstract
Undoped and Cr-doped zinc oxide (ZnO) thin films were deposited on the glass and p-Si substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray diffractometry (XRD) and UV-visible spectrometry, and electrical characterization was achieved by using the films as an interfacial layer between the Au and p-Si. The XRD results confirmed the undoped and Cr-doped ZnO thin film crystalline structures. UV-visible spectra provided the transmittance plots and band gap energy values. I-V measurements were performed on the fabricated Au/ZnO/p-Si and Au/ZnO:Cr/p-Si devices to determine the effect of the ZnO interfacial layer on their performance. Various junction parameters, such as the ideality factor, barrier height, and series resistance, were calculated from the I-V measurements by various techniques, and have been discussed in detail. A 100-mW/cm(2) power intensity light was exposed on the Au/ZnO:Cr/p-Si device to see the photodiode behavior as well as to determine light sensitivity parameters such as photosensitivity and detectivity. The results highlight that the Au/ZnO:Cr/p-Si device can be thought of for optoelectronic applications.