Temperature and tellurium (Te) dependence of electrical characterization and surface properties for a chalcopyrite structured schottky barrier diode

Fiat S., BACAKSIZ E., Kompitsas M., ÇANKAYA G.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.585, ss.178-184, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 585
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.jallcom.2013.09.123
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.178-184
  • Anahtar Kelimeler: CIGSeTe, Electrical properties, Schottky barrier diodes, AFM, CURRENT-TRANSPORT, HEIGHT, INTERFACE, CONTACTS, INHOMOGENEITIES, VOLTAGE, CUINSE2, STATES
  • Karadeniz Teknik Üniversitesi Adresli: Evet

Özet

Al/p-CuIn0.7Ga0.3(Se(1-x)Tex)(2)/Mo Schottky barrier diodes (SBD) have been investigated as electrical and morphological. Electrical characterization and surface maps of the prepared CuIn0.7Ga0.3(Se(1-x)Tex)(2) (briefly, CIGSeTe) compounds with two different compositions for x = 0.0 and 0.6 were examined in 150-300 K range. CIGSeTe films were grown on Mo back contact. Some electrical parameters such as, ideality factors, n; zero-bias barrier heights, Phi(bo) and Richardson constants were calculated from the current-voltage (I-V) measurements and plotted as a function of temperature. These results verify that electrical properties of these two diodes can be defined on the basis of the Thermionic emission (TE) theory with the Gaussian distribution (GD) of the Schottky barrier height (SBH) being related to inhomogeneities at the metal/semiconductor (MS) interface. On the other hand, we saw a better morphology in Te rich samples. Rms (root mean square) values increased from 8.50 nm to 9.80 nm with higher pellets on surface with Te. (C) 2013 Elsevier B.V. All rights reserved.