ZnS films were deposited by spray pyrolysis on glass at 500 degrees C substrate temperature. In order to study the influence of fluorine on the properties of ZnS film, undoped and F-doped films were investigated using X-ray diffraction, scanning electron microscopy and optical transmittance spectroscopy. The absorption coefficient was measured and correlated with the photon energy to estimate the energy gap, which rises from 3.20 to 3.35 eV with increased F content. Carrier concentrations of our samples were determined from Hall effect measurements. It was found that the carrier concentration increases from 7.0 x 10(12) cm(-3) to 8.0 x 10(13) cm(-3) with increasing F content from 0 to 6 wt.% in ZnS films. (C) 2007 Elsevier B.V. All rights reserved.