In this study, a silicon doped diamond-like carbon (DLC) nanocomposite film was deposited electrochemically and it was used to fabricate an Ag/Si-DLC/p-Si metal-interlayer-semiconductor (MIS) Schottky diode. Methanol (CH3OH) was used as carbon and tetraethoxysilane (Si(OC2H5)(4)) as Si source, respectively. Morphology of the film was observed by scanning electron microscopy and continuous surface with numerous lumps spread randomly was observed. Structural and chemical composition analyses of the film were carried out by Raman and X-ray photoelectron spectroscopy. Typical D and G bands of DLC films were not observed in the Raman spectrum due to abundance of Si-C bonds. Silicon incorporation promoted the film deposition and increased sp(3) bonds in the film. Current-Voltage (I-V) measurement was conducted to obtain parameters of the MIS diode. The diode exhibited a good rectifier behavior with similar to 10(3) rectification ratio. In the forward bias semi-logarithmic I-V plot, two linear regions with different slopes were observed. Such behavior was modelled by two parallel diodes and attributed to different conduction mechanism. The main electrical parameters, such as barrier height, ideality factor and series resistance were calculated by I-V and Cheung-Cheung methods. The Si-DLC nanocomposite film acted as barrier height modifier in the MIS diode.