The Effect of Phosphorus Concentration Within The Spin-On Doping Source on Emitter Sheet Resistance and Carrier Lifetimes of P-Type mc-Si Wafers

Jaballah A. B. , ÜZÜM A. , Supajariyawichai P., Ban N., DHAMRIN M., Saitoh T., ...More

The 69th Autumn Meeting of Japanese Society of Applied Physics, Aichi, Japan, 2 - 05 September 2008

  • Publication Type: Conference Paper / Full Text
  • City: Aichi
  • Country: Japan