The influence of substrate temperature on the morphology, optical and electrical properties of thermal-evaporated ZnTe Thin Films


APPLIED SURFACE SCIENCE, vol.256, no.5, pp.1566-1572, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 256 Issue: 5
  • Publication Date: 2009
  • Doi Number: 10.1016/j.apsusc.2009.09.023
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1566-1572
  • Keywords: ZnTe thin films, Vacuum evaporation, Substrate temperature, Annealing temperature, Microstructure, Optical band gap, Electrical resistivity, MOLECULAR-BEAM EPITAXY, CHEMICAL-VAPOR-DEPOSITION, CADMIUM TELLURIDE FILMS, PULSED-LASER DEPOSITION, ZINC TELLURIDE, SOLAR-CELLS, EFFICIENCY, CDZNTE, LAYERS
  • Karadeniz Technical University Affiliated: Yes


The structural, morphological, optical and electrical properties of ZnTe films deposited by evaporation were investigated as a function of substrate temperature (at -123 and 27 degrees C) and post-deposition annealing temperature (at 200, 300 and 400 degrees C). It was determined that films deposited at both substrate temperatures were polycrystalline in nature with zinc-blende structure and a strong (1 1 1) texture. A small Te peak was detected in XRD spectra for both substrate temperatures, indicating that as-deposited ZnTe films were slightly rich in Te. Larger grains and a tighter grain size distribution were obtained with increased substrate temperature. Scanning electron microscopy (SEM) studies showed that the microstructures of the as-deposited films agreed well with the expectations from structure zone model. Post-deposition annealing induced further grain growth and tightened the grain size distribution. Annealing at 400 degrees C resulted in randomization in the texture of films deposited at both substrate temperatures. Optical spectroscopy results of the films indicated that the optical band gap value increased from 2.13 to 2.16 eV with increased substrate temperature. Increasing the annealing temperature sharpened the band-edge. Resistivity measurements showed that the resistivity of films deposited at substrate temperatures of -123 and 27 degrees C were 32 V cm, and 1.0 x 10(4) Omega cm, respectively with corresponding carrier concentrations of 8.9 x 10(15) cm (3) and 1.5 x 10(14) cm (3). Annealing caused opposite changes in the film resistivity between the samples prepared at substrate temperatures of -123 and 27 degrees C. (C) 2009 Elsevier B.V. All rights reserved.