Synthesis of In<sub>2</sub>O<sub>3</sub> nanostructures with different morphologies as potential supercapacitor electrode materials


TUZLUCA YEŞİLBAĞ F. N., YEŞİLBAĞ Y. Ö., ERTUĞRUL M.

APPLIED SURFACE SCIENCE, vol.427, pp.956-964, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 427
  • Publication Date: 2018
  • Doi Number: 10.1016/j.apsusc.2017.08.127
  • Journal Name: APPLIED SURFACE SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.956-964
  • Karadeniz Technical University Affiliated: No

Abstract

In this study performed using a chemical vapor deposition (CVD) system, one-dimensional (1-D) single crystal indium oxide (In2O3) nanotowers, nanobouqets, nanocones, and nanowires were investigated as a candidate for a supercapacitor electrode material. These nanostructures were grown via Vapor-Liquid-Solid (VLS) and Vapor-Solid (VS) mechanisms according to temperature differences (1000-600 degrees C). The morphologies, growth mechanisms and crystal structures of these 1-D single crystal In2O3 nanostructures were defined by Field Emission Scanning Electron Microscopy (FESEM), High Resolution Transmission Electron Microscopy (HR-TEM), X-Ray Diffraction (XRD) and Raman Spectroscopy analyses. The elemental analyses of the nanostructures were carried out by energy dispersive X-Ray Spectroscopy (EDS); they gave photoluminescence (PL) spectra with 3.39, 2.65, and 1.95 eV band gap values, corresponding to 365 nm, 467 nm, and 633 wavelengths, respectively. The electrochemical performances of these 1-D single crystal In2O3 nanostructures in an aqueous electrolyte solution (1 M Na2SO4) were determined by Cyclic Voltammetry (CV), Galvanostatic Charge Discharge (GCD) and Electrochemical Impedance Spectroscopy (EIS) analyses. According to GCD measurements at 0.04 mA cm(-2) current density, areal capacitance values were 10.1 mF cm(-2) and 6.7 mF cm(-2) for nanotowers, 12.5 mF cm(-2) for nanobouquets, 4.9 mF cm(-2) for nanocones, and 16.6 mF cm(-2) for nanowires. The highest areal capacitance value was observed in In2O3 nanowires, which retained 66.8% of their initial areal capacitance after a 10000 charge-discharge cycle, indicating excellent cycle stability. (C) 2017 Elsevier B.V. All rights reserved.