Understanding the role of sulfurization temperature and sulfur amount in two-stage fabricated Sb<sub>2</sub>S<sub>3</sub> thin films for photodetection

Olgar M. A., Keser Y. İ., Çam M., Daday M. T., Yılmaz S., Bacaksız E., ...Daha Fazla

SURFACES AND INTERFACES, cilt.80, 2026 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 80
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1016/j.surfin.2025.108263
  • Dergi Adı: SURFACES AND INTERFACES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: Amount of sulfur, Photodetection, Rapid thermal processing (RTP), Sb2S3 thin film, Sputtering, Sulfurization temperature
  • Karadeniz Teknik Üniversitesi Adresli: Evet

Özet

Sb2S3 thin films were fabricated via a two-stage process for photodetector applications. In the first stage, Sb thin films deposited by sputtering were sulfurized at various temperatures (350-425 degrees C) using a fixed sulfur amount (10 mg), and in the second, the sulfur amount (10-25 mg) was varied at 375 degrees C. The effects of sulfurization conditions on the chemical composition, crystal structure, surface morphology, optical, and electrical properties were systematically studied. This study establishes the critical role of sulfurization temperature and sulfur amount in determining the structural evolution and stoichiometry of Sb2S3 thin films, thereby enabling control over their photo-sensing performance. The optimal S/Sb ratio (approximate to 1.07-1.08) and crystallinity were achieved at 375 degrees C, yielding the large-grained, lower defect-free films with preferential (hk1) orientation. Increasing the sulfur amount enhanced the S/Sb ratio up to 1.43 but introduced an undesired (hk0) orientation beyond 20 mg. The sample prepared with 15 mg sulfur (SbS-375-15) exhibited favorable morphology, a proper bandgap (1.68 eV), the highest carrier concentration, and lowest resistivity, making it the best photodetector candidate. The corresponding device showed low dark current (<1 nA), high photocurrent (similar to 10 nA), fast response (rise/fall: 11.2/12.7 ms), sensitivity of 1090 %, detectivity of 2.45 x 10(6) Jones, and an external quantum efficiency (EQE) of 0.841 %, demonstrating the strong potential of Sb2S3 for high-performance photodetectors.