Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature


TOMAKİN M., Altunbas M., BACAKSIZ E., Celik S.

THIN SOLID FILMS, vol.520, no.7, pp.2532-2536, 2012 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 520 Issue: 7
  • Publication Date: 2012
  • Doi Number: 10.1016/j.tsf.2011.10.160
  • Journal Name: THIN SOLID FILMS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.2532-2536
  • Keywords: CdS, Thin films, Vacuum evaporation, Electrical properties and measurements, X-ray diffraction, ELECTRICAL-PROPERTIES, OPTICAL-PROPERTIES, CONDUCTION, THICKNESS, PHOTOCONDUCTIVITY, SEMICONDUCTORS, SULFIDE, SILICON

Abstract

CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (T-S > 300 K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300 K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300 K for the sample prepared at 300 K substrate temperature. The dominant conduction mechanism of the samples prepared at 200 K and 100 K is determined as thermionic emission over 200 K and Mott's hopping process below 200 K. The Mott's hopping process is not applicable for the sample prepared at 300 K. (C) 2011 Elsevier B.V. All rights reserved.