Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature

TOMAKİN M., Altunbas M., BACAKSIZ E., Celik S.

THIN SOLID FILMS, cilt.520, sa.7, ss.2532-2536, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 520 Sayı: 7
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.tsf.2011.10.160
  • Dergi Adı: THIN SOLID FILMS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2532-2536
  • Anahtar Kelimeler: CdS, Thin films, Vacuum evaporation, Electrical properties and measurements, X-ray diffraction, ELECTRICAL-PROPERTIES, OPTICAL-PROPERTIES, CONDUCTION, THICKNESS, PHOTOCONDUCTIVITY, SEMICONDUCTORS, SULFIDE, SILICON
  • Karadeniz Teknik Üniversitesi Adresli: Evet

Özet

CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (T-S > 300 K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300 K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300 K for the sample prepared at 300 K substrate temperature. The dominant conduction mechanism of the samples prepared at 200 K and 100 K is determined as thermionic emission over 200 K and Mott's hopping process below 200 K. The Mott's hopping process is not applicable for the sample prepared at 300 K. (C) 2011 Elsevier B.V. All rights reserved.