Electron radiation-induced device degradation in commercial SiC Power MOSFETs
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, cilt.128, sa.3, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 128 Sayı: 3
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s10470-026-02643-w
- Dergi Adı: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Compendex, INSPEC, DIALNET, Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Karadeniz Teknik Üniversitesi Adresli: Evet
Özet
The effects of 3 MeV electron radiation on the electrical performance of commercial 650 V silicon carbide (SiC) MOSFETs are investigated at doses of 50 kGy, 100 kGy, and 200 kGy. Post-irradiation results reveal a reduction in on-state resistance, indicated by increased drain current (IDS), and a negative shift in threshold voltage (VTH) due to positive charge trapping in the gate oxide. At higher doses, VTH stabilizes as electron injection neutralizes positive traps. Capacitance and gate-source leakage current analyses show radiation-induced defect formation, with Fowler-Nordheim (FN) tunneling identified as the dominant leakage mechanism. These findings advance the understanding of SiC MOSFET degradation under radiation, contributing to developing robust power devices for space and radiation-critical applications.