Fundamentals of intrinsic stress during silicide formation

Oezcelik A., Van Bockstael C., Detavernier C., Vanmeirhaeghe R.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.453-454 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733232
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.453-454
  • Karadeniz Technical University Affiliated: Yes


Silicides are a very useful group of materials which can be used to make electrical contacts to circuits in electronic devices with an extremely high performance. The stress in thin films is an increasingly important technological issue from the standpoint of reliability and performance in IC processing. Manufacturers of micro electronic devices have to control the stress levels in the contact films to avoid device failures. Phase transitions such as silicidation or even a simple rearrangement of atoms like relaxation in the metal film cause a difference in the volume of the film from its starting value. This volume change produces stress inside the film. In this work we analyzed the stress evolution during the silicidation reaction of some metals such as W and Mo by using a home built in situ stress system at the University of Ghent.