Thermal Treatment of Sol Gel Prepared Silicon Dioxide Thin Films for Solar Cells

Kanmaz İ., Üzüm A.

9th International Conference on Advanced Technologies, İstanbul, Türkiye, 9 - 12 Ağustos 2020, ss.69

  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.69


The reflection of the light coming on the surface of the solar cells is an important factor affecting the conversion efficiency. Therefore, anti-reflection coatings (ARC) are very important for higher efficiencies of crystal silicon solar cells. By applying one or more layers of ARC to photovoltaic cells or other optoelectronic devices, the reflection of incoming light can be reduced and the performance of the device can be improved. Energy costs can be reduced by reducing costs in the production methods including the solution based techniques. Reflection properties of sol-gel based prepared Silicon Dioxide (SiO2) thin films was studied in this work. Solutions were deposited by spin coating method. Antireflection coating effect of SiO2 thin films on crystalline silicon substrates were analyzed after optimizing the solution, deposition and thermal treatment processes. Characterizations were carried out including XRD analysis, Scanning electron microscopy measurements and spectrophotometer reflectance measurements. Annealing conditions of 950 °C for 7 min in air was determined to be the optimum to deposit sol based SiO2 thin films for solar cell applications. With the coating of SiO2 thin film on the c-Si surface, the average reflectance (350 – 1100 nm) value decreased from approximately 36% to around 19% where the minimum was below <10%.