Development of photovoltaic and photodetection characteristics in CdS/P3HT devices through Al-doping

Töreli S., Yılmaz S., TOMAKİN M., POLAT İ., BACAKSIZ E.

Materials Science and Engineering: B, cilt.309, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 309
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1016/j.mseb.2024.117642
  • Dergi Adı: Materials Science and Engineering: B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Al-doping, CBD, CdS thin films, Hybrid photovoltaic cell, Self-driven photodetector
  • Karadeniz Teknik Üniversitesi Adresli: Evet

Özet

CdS thin films were deposited by chemical bath deposition onto FTO substrates with Al concentrations of 0, 1, 3, 5 and 6 %. X-ray diffraction revealed introduction of 1 % Al-doping reduced dislocation density and enhanced the crystal quality of CdS. Scanning electron microscopy confirmed a reduction in grain size in Al-doped CdS films compared to CdS. N3 and P3HT layers were spin-coated onto the prepared substrates, respectively. The fabrication of the solar cells was completed using Ag silver paste for the top contact. The lowest photoluminescence peak intensity was achieved for CdS (3 %Al):P3HT solar cell, indicating efficient exciton dissociation. 3 % Al-doped CdS-based device exhibited the highest efficiency at 0.210 %, nearly seven times that of reference device. CdS (3 %Al):P3HT device demonstrated the best photodetection characteristics, with a responsivity of 2.2 × 10-2 A/W, detectivity of 3.3 × 108 Jones, response time of 13 ms, and recovery time of 12 ms at zero bias voltage.