Structural and electrical characterization of ZnO-based homojunctions

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BACAKSIZ E., Cankaya G., POLAT İ., YILMAZ Ş., DURAN C., Altunbas M.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.496, pp.560-565, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 496
  • Publication Date: 2010
  • Doi Number: 10.1016/j.jallcom.2010.02.102
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.560-565
  • Karadeniz Technical University Affiliated: Yes


Micro-sized ZnO rods on SnO2 coated glass substrate were obtained by spray pyrolysis method. Then a p-type nanorod ZnO layer was deposited on this micro-sized n-ZnO to produce a p-n homojunction. Temperature dependent current-voltage (I-V) characteristics were measured in the temperature range 150-300K with a step of 25 K. The current-voltage characteristics exhibit electrical rectification behavior. The zero bias barrier height Phi(b0) increases and ideality factor n decreases with an increase in temperature. The apparent Richardson constant and mean barrier height were found to be 0.062 A cm(-2) K-2 and 0.122 eV, respectively in the range 150-300K. After barrier height inhomogeneities correction, the Richardson constant and the mean barrier height were obtained as 179.05 A cm(-2) K-2 and 0.884 eV respectively. (C) 2010 Elsevier B.V. All rights reserved.