Akademik Veri Yönetim Sistemi
Journal of Alloys and Compounds, cilt.1018, 2025 (SCI-Expanded)
This study investigates the effects of magnesium (Mg) and germanium (Ge) double cation alloying on the properties of Cu2ZnSnSe4 (CZTSe) thin films and the performance of solar cells fabricated on them. Mg-Ge co-doped CZTSe layers (CMgZTSe-Ge) were synthesized by selenization of Cu/Sn/Zn/Cu/(Mg,Ge)/Se precursor stacks using rapid thermal processing at 550 °C. The investigation focused on the effects of varying the Ge doping concentration while maintaining the Mg content constant. The structural, morphological and optical properties of the films were investigated, and the solar cell performance was evaluated as a function of material composition. X-ray diffraction (XRD) and Raman spectroscopy analysis confirmed the formation of the kesterite phase for all samples. Scanning electron microscopy (SEM) analysis demonstrated that Ge incorporation significantly influenced the film's microstructure. The optimum Ge doping level in the films resulted in the largest grain size and best overall surface morphology, compared to the undoped or excessively doped samples. Raman and XPS analyses confirmed a reduction in the Cu-Zn disorder and Sn-related deep defects with Mg and Ge doping. The CMgZTSe-Ge10 solar cell exhibited a significant efficiency improvement from approximately 4–5.69 % due to enhancements in the solar cell parameters, which is attributed to the overall grain growth and defect reduction. This research highlights the potential of Mg-Ge double cation doping to enhance CZTSe solar cell efficiency and provides insights into optimizing the dopant concentration for improved performance. The findings contribute to the understanding of the complex interplay between dopant incorporation, structural properties, and device performance in CZTSe-based solar cells.