Akademik Veri Yönetim Sistemi
EUROPEAN PHYSICAL JOURNAL PLUS, cilt.140, sa.9, 2025 (SCI-Expanded)
In this study, WO3 thin films were successfully grown on p-type Si at five different concentrations, 0.05, 0.10, 0.15, 0.20 and 0.25 M, using the sol-gel method. The results were characterized structurally, morphologically and optically. Structural and morphological measurements confirmed the successful coating of thin films, while optical characterizations were carried out with reflectance, transmittance and absorption analyses depending on molarity. As a result of the reflectance measurements, the lowest reflectance ratio of 11.88% was obtained in WO3 thin films with 0.2 M concentration. Considering the reflectance ratio of 39.16% on the uncoated silicon surface, this result shows a decrease in reflectance of approximately 70%. WO3 thin films exhibited high absorption properties, especially in the UV region, with increasing molarity, while exhibiting high optical transmittance in the wavelength range of 450-1000 nm. The band gap values obtained from the transmittance curves showed an increasing trend in the range of 0.10-0.25 M with the effect of increasing molarity, and a band gap value of 2.53 eV was obtained for the 0.20 M WO3 thin films determined as optimum.