Leakage Current Mechanisms in Silicon Carbide MOSFETs - A Review

Baba T., Hasbullah N. F., Saidin N., Siddiqui N. A., ÜZÜM A., TURHAL M.

Transactions on Electrical and Electronic Materials, vol.26, no.6, pp.779-800, 2025 (ESCI, Scopus) identifier identifier

  • Publication Type: Article / Review
  • Volume: 26 Issue: 6
  • Publication Date: 2025
  • Doi Number: 10.1007/s42341-025-00668-y
  • Journal Name: Transactions on Electrical and Electronic Materials
  • Journal Indexes: Emerging Sources Citation Index (ESCI), Scopus, Compendex, INSPEC
  • Page Numbers: pp.779-800
  • Keywords: Gate leakage, Junctions, Leakage currents, MOSFET, Silicon carbide (SiC), Tunneling
  • Karadeniz Technical University Affiliated: Yes

Abstract

MOSFETs are integral components in modern electronics, renowned for their efficiency and performance. However, leakage currents, including drain-source (IDSS) and gate-source (IGSS) currents, pose significant challenges to device reliability and overall system efficiency, leading to issues such as increased power loss, thermal stress, and reduced lifespan of devices. This review delves into the mechanisms underlying leakage currents in SiC MOSFETs, a promising technology for high-power applications. The key factors contributing to leakage, such as gate oxide degradation, material properties, and device architecture, have been identified by examining the research conducted over the past few years. Understanding the leakage current mechanisms is crucial for developing effective mitigation strategies and optimizing SiC MOSFET performance. This review concludes by summarizing key findings and highlighting the importance of ongoing research.