Structural, morphological, optical and electrical evolution of spray deposited ZnO rods co-doped with indium and sulphur atoms


Yilmaz S., POLAT İ. , Atasoy Y. , BACAKSIZ E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.25, no.4, pp.1810-1816, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 25 Issue: 4
  • Publication Date: 2014
  • Doi Number: 10.1007/s10854-014-1803-8
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Page Numbers: pp.1810-1816

Abstract

Undoped and (In-S) co-doped ZnO films were grown by the spray pyrolysis method on glass substrates. The structural, morphological, optical and electrical properties of all the samples were studied in detail. X-ray diffraction results showed that all the samples have a hexagonal wurtzite structure with the preferred orientation that changed from (002) to the random orientation after (In-S) co-doping. From the scanning electron microscopy analysis, it is noted that the morphology of ZnO changed from rods to thin film upon (In-S) co-doping. Compared to undoped ZnO rods, transparency of (In-S) co-doped ZnO thin films significantly increased whereas their band gap values gradually decreased. From photoluminescence measurements, it is observed that the UV peak completely quenched after (In-S) co-doping while the deep level band intensity slightly increased especially for 2 and 4 at.% (In, S) co-doped ZnO samples. Compared with undoped sample, the carrier concentration enhanced with the increase of (In-S) co-doping to 4 at.% and further increase in the co-doping amount results in the decline of the conductivity.