A theoretical scaling for rectifying and surface properties of highly-crystalline N-C anthracene Schottky junctions

Varol S. F., Sayin S., Eymur S., Uzun K.

MATERIALS RESEARCH BULLETIN, cilt.85, ss.249-254, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.materresbull.2016.09.029
  • Dergi Adı: MATERIALS RESEARCH BULLETIN
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.249-254
  • Anahtar Kelimeler: Electronic materials, Thin films, Sol-gel chemistry, Semiconductors, Electrical properties, LIGHT-EMITTING-DIODES, CURRENT-VOLTAGE, ELECTRICAL CHARACTERISTICS, BARRIER HEIGHT, INTERFACIAL LAYER, V CHARACTERISTICS, ORGANIC-COMPOUND, SI, PARAMETERS, RESISTANCE
  • Karadeniz Teknik Üniversitesi Adresli: Hayır

Özet

This article describes an anthracene derivative nitropyridine conjugated (N-C) substituent has been efficiently used in Schottky junction applications. The effect of solution aging with a long period from 1 h to 1 week on diode parameters such as ideality factor, barrier height, and series resistance were studied in details. The barrier height varied almost linearly with aging and the values increased from 0.623 to 0.860 eV, 0.710 to 0.884 eV, 0.715 to 0.836 eV and 0.678 to 0.683 eV determined from I-V method, Cheung's, Norde's functions and C-V method, respectively, on the other hand, the ideality factor decreased from 3.08 to 1.55 and 3.24 to 1.52 determined from I-V and Cheung functions respectively, with increase in aging. Low ideality factor suggests an ideal Schottky junction formation. The series resistance values obtained from Norde's function and Cheung functions exhibited a good agreement and a strong dependence to solution aging. (C) 2016 Elsevier Ltd. All rights reserved.