Passivation properties of HfO2-SiO2 mixed metal oxide thin films with low reflectivity on silicon substrates for semiconductor devices

ÜZÜM A., Kanmaz I.

Thin Solid Films, cilt.738, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 738
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.tsf.2021.138965
  • Dergi Adı: Thin Solid Films
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Passivation, Hafnium dioxide, Silicon dioxide, Silicon solar cells, Anti-reflection, Mixed metal oxide, Spin coating, SURFACE PASSIVATION, LAYERS, CRYSTALLIZATION
  • Karadeniz Teknik Üniversitesi Adresli: Evet

Özet

© 2021HfO2-SiO2 mixed oxide-based thin films were introduced in this work, and their passivation and anti-reflection properties were examined by using carrier lifetime, x-ray diffraction, scanning electron microscope, energy dispersive x-ray analysis, reflectance, and Fourier transform infrared measurements. The HfO2-SiO2 mixed oxide solutions were prepared with different composition ratios, and the thin films were formed on p-type CZ-Si substrates using the spin-coating technique. Annealing of the samples was carried out in ambient air at different temperatures after optimizing the solution ratio. When annealed at 600 and 700°C, the average reflectance of the samples was observed to be around 15% in the spectral range of 300-1000 nm, with a minimum reflectance point lying in the visible range. The effective carrier lifetimes increased up to 32 μs after annealing at 600°C compared to the initial lifetime of around 2 μs. Annealing at higher temperatures significantly decreased the carrier lifetimes (4.5 and 0.6 μs for 700 and 800°C, respectively). The results of this study revealed that the HfO2-SiO2 mixed oxide films can provide a good passivation effect in addition to an effective anti-reflection property depending on the annealing temperature.